CWDM3011N TR13

Part NumberCWDM3011N TR13

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CWDM3011N
Standard Package	1
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 5V
Vgs (Max)	20V
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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